The formation of InSb quantum dots (QDs) embedded in an InAs matrix grown by molecular beam epitaxy (MBE) was studied parametrically. In particular, the effect of the sequence of the change of As2 dimers and Sb2 on the distribution of As and Sb at the InSb-QDs/InAs interface was investigated by cross-sectional transmission electron microscopy (TEM). It was shown that additional As2 above the InSb QDs results in the disappearance of InSb, while additional Sb2 enhances the size of the InSb QDs. The specific growth method, Stranski-Krastanov (S-K) or migration-enhanced epitaxy (MEE), also affects the shape of the QDs. The cross-sectional TEM images were investigated with geometrical phase analysis (GPA) as a function of the InSb coverage. Photoluminescence spectroscopy on samples comprising 21 stacked InSb QD layers revealed a strong emission peak at about 4 mu m (77 K). The formation of InSb quantum dots (QDs) embedded in an InAs matrix grown by molecular beam epitaxy (MBE) was studied parametrically. In particular, the effect of the sequence of the change of As2 dimers and Sb2 on the distribution of As and Sb at the InSb-QDs/InAs interface was investigated by cross-sectional transmission electron microscopy (TEM). It was shown that additional As2 above the InSb QDs results in the disappearance of InSb, while additional Sb2 enhances the size of the InSb QDs. The specific growth method, Stranski–Krastanov (S–K) or migration-enhanced epitaxy (MEE), also affects the shape of the QDs. The cross-sectional TEM images were investigated with geometrical phase analysis (GPA) as a function of the InSb coverage. Photoluminescence spectroscopy on samples comprising 21 stacked InSb QD layers revealed a strong emission peak at about 4 μm (77 K). Copyright © 2026 American Chemical Society

On-chip optical communication between individual nano optoelectronic components is important to reduce the footprint and improve energy efficiency of photonic neuromorphic solutions. Although nanoscale photon emitters and receivers have been reported separately, communication between them remains largely unexplored. We demonstrate direct on-chip directional broadcasting of light between individual InP nanowire photodiodes on silicon. The performance of multiple wire-to-wire communication circuits is mapped, demonstrating robust performance with up to 5 bit resolution as needed in biological networks and a minimum component driving power for continuous operation of 0.5 μW which is below that of conventional hardware. The results agree well with theoretical modeling that allows us to understand network performance limits and identify where significant improvements could be achieved. We estimate that an energy per operation of ∼1 fJ and signal fan-out from one emitter to hundreds of other nodes is possible. We find that the nanowire circuit performance parameters can satisfy the quantitative requirements to run the tasks of neural nodes in a bioderived neural network for autonomous navigation. © 2025 The Authors.

The structural integration of energy storage could play a pivotal role in designing more efficient, lightweight systems such as electric transport, internet of things (IoT) devices and autonomous systems. The current work focuses on the fabrication and characterization of novel multifunctional composites for sodium-ion structural batteries. A PEO-PVP polymer matrix with added InAs nanowires and glass fiber reinforcements was used to fabricate a structural electrolyte (GF_PEO-PVP-InAsNW-NaPF6). It shows an ionic conductivity of 1.7 x 10-4 S cm-1 at 70 degrees C, an electrochemical stability window of 0 to 3.7 V, a sodium ion transference number of 0.40 and a high tensile strength of 76.5 MPa. A structural electrode is fabricated by laminating the electrolyte with intermediate modulus carbon fibers (CF) and it shows a high tensile strength of 171.5 MPa. The structural CF & Vert;GF_PEO-PVP-InAsNW-NaPF6 & Vert;Na cell provides a typical energy density of 17.5 Wh kg-1 at 0.1C rate and accomplished 600 cycles at 0.8C rate while retaining 80% capacity at the end of 280 cycles. The investigation in this preliminary work reveals addition of InAs nanowire fillers enhances both the tensile strength and ionic conductivity of the structural electrolyte and boosts the cycling stability of the structural cell by delaying sodium dendrite formation, and the usage of intermediate modulus carbon fibers in the fabricated electrodes demonstrates sodium-ion intercalation capabilities. The fabricated components display multifunctional performance and show good potential for sodium-ion structural battery applications. © The Royal Society of Chemistry 2025

Circuits of multiple deterministically positioned semiconductor nanowires (NWs) is the basis of many devices for photonic, quantum, or conventional transistor applications. To explore and iterate on the design of larger circuits, the means to quickly place and electrically evaluate NWs at target locations must be developed. We propose and demonstrate a multi-NW circuit building concept on SiO2/Si substrates, which enables us to quickly position and orient NW components into pre-designed configurations. Micro-manipulator probes are used to guide the NWs into reactive ion etched trenches, with desired designs, before contact metallization. The positioning works over a wide combination of trench widths and depths. Positioning accuracies are contingent on EBL patterning, precise up to ±10 nm. To demonstrate the concept, we create circuits of InP and InAs NWs with a wide variety of specific orientations. The concept was used to iterate a procedure for creating optimal contacts for InP NW photodiodes. Subsequently, we could fabricate and electrically probe 54 fully operational nano-photodiodes placed on three different samples, from which considerable statistics of diode performance could be obtained. Fabrication steps are directly compatible with conventional Si CMOS architecture and should function for a wide range of NW types. The accuracy and rate of placement combined with high fabrication yields enables proof-of-concept prototyping of complex circuits. © 2025 The Authors

Herein, a model is developed to study the polarization-selective light-coupling in quantum well infrared photodetector arrays with 15 and 30 μm pixel pitch. The polarization-selective light-coupling is achieved using 1D lamella gratings with varying grating orientation and studied through 2D and 3D finite-element method simulations. The extracted absorption quantum efficiency ηabs, derived from the field distribution, shows excellent agreement with experimental data in terms of absorption peak position for both pitch sizes. Several factors impacting the simulated absorptance level are discussed and a good agreement between the simulation and measured ηabs is achieved. Thanks to the developed 3D model, the polarization-selective light-coupling in pixels with 0° and 45° grating orientation is explored. The developed model paves the way for future studies on enhanced light-coupling in small pitch infrared detectors using resonance structures. © 2024 IRnova AB and The Author(s).

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-band k center dot p simulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs © 2024 The Author(s). Published by IOP Publishing Ltd.

On-chip light broadcasting can reduce spatial footprint and enhance energy efficiency in photonic neuromorphic systems. We demonstrate on-chip light transmission between InP nanowire photodiodes on silicon, addressing the gap towards complete nanoscale photonic integrated circuits. © 2025 The Author(s)

Computational efficiency is significantly enhanced using artificial neural network-based computing. A two-terminal memristive device is a powerful electronic device that can mimic the behavior of a biological synapse in addition to storing information and performing logic operations. This work focuses on the fabrication of a memristive device that utilizes a resistive switching layer composed of polyvinyl alcohol infused with ZnO nanoparticles. By incorporating ZnO nanoparticles into the polymer film, the fabricated memristive devices exhibit functionalities that closely resemble those of biological synapses, including short-term and long-term plasticity, paired-pulse facilitation, and spike time-dependent plasticity. These findings establish the ZnO nanoparticle-polymer nanocomposite as a highly promising material for future neuromorphic systems. © 2023 Author(s).

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W⁻¹ at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K. © 2023 RSC.

In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.