hh.sePublications
Change search
Refine search result
1 - 2 of 2
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Hussain, Laiq
    et al.
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS).
    Pettersson, Håkan
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
    Wang, Q.
    Acreo Swedish ICT AB, Kista, 16425, Sweden.
    Karim, A.
    Acreo Swedish ICT AB, Kista, 16425, Sweden.
    Anderson, J.
    Acreo Swedish ICT AB, Kista, 16425, Sweden.
    Jafari, Mehrdad
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
    Song, J.
    Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
    Choi, W. J.
    Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
    Han, I. K.
    Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
    Lim, J. Y.
    Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
    SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE2018In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 73, no 11, p. 1604-1611Article in journal (Refereed)
    Abstract [en]

    Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 ÎŒm to 12 ÎŒm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications. © 2018, The Author(s).

  • 2.
    Wang, Qin
    et al.
    Acreo ICT AB, Kista, Sweden.
    Jafari, Mehrdad
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
    Hussein, Laiq
    Solid State Physics and the Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Song, Jindong
    Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
    Choi, Won Jun
    Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
    Han, Il Ki
    Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
    Lee, Eun Hye
    Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
    Park, Suk In
    Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
    Lim, Ju Young
    Laser-IT Center, Korea Photonics Technology Institute, Seoul, South Korea.
    Karim, Amir
    Acreo ICT AB, Kista, Sweden.
    Andersson, Jan Y.
    Acreo ICT AB, Kista, Sweden.
    Pettersson, Håkan
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
    MWIR interband transitions in type-II (III) In(GaAl)Sb quantum dots2015Conference paper (Refereed)
    Abstract [en]

    In this work we present an alternative approach for realizing desired IR devices with appropriate operating wavelengths in the MWIR region utilizing In(GaAl)Sb quantum dots embedded in an InAs matrix grown by MBE. The QDs exhibit spatially indirect interband transitions in a type-II broken bandgap alignment, with a transition energy that can be tuned by bandgap and strain engineering utilizing either the quantum dot size or the incorporation of Ga or (GaAl) into the QDs. Furthermore, the growth of such QDs does not require sophisticated epitaxial designs needed for superlattices or quantum cascade structures regarding large numbers of alternating layers and very exact interfaces. The QD structures are expected to exhibit key advantages for IR devices e.g. higher operating temperature, lower power consumption, size, weight, and cost. The structural and composition properties of designed and grown In(GaAl)Sb QDs were characterized using AFM, SEM, TEM, and XRD. The corresponding optical properties, both in terms of absorption and emission, were analyzed and compared for selected QD samples before and after annealing at 650 °C.

1 - 2 of 2
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf