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  • 1.
    Paschoal Jr., Waldomiro
    et al.
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Kumar, Sandeep
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Jacobsson, Daniel
    Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Johannes, Andreas
    Institute for Solid State Physics, Jena University, Jena, Germany.
    Jain, Vishal
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Canali, Carlo M.
    Department of Physics and Electrical Engineering, Linneaus University, Kalmar, Sweden.
    Pertsova, Anna
    Department of Physics and Electrical Engineering, Linneaus University, Kalmar, Sweden.
    Ronning, Carsten
    Institute for Solid State Physics, Jena University, Jena, Germany.
    Dick, Kimberly A.
    Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Samuelson, Lars
    Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
    Pettersson, Håkan
    Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
    Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 15, article id 153112Article in journal (Refereed)
    Abstract [en]

    We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. © 2014 AIP Publishing LLC.

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