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  • 1.
    Karimi, Mohammad
    et al.
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Zeng, Xulu
    Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Witzigmann, Bernd
    Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel, Germany.
    Samuelson, Lars
    Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Borgström, Magnus T.
    Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Pettersson, Håkan
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Högskolan i Halmstad, Akademin för ekonomi, teknik och naturvetenskap, Rydberglaboratoriet för tillämpad naturvetenskap (RLAS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating2019Inngår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, nr 12, s. 8424-8430Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    High-performance photodetectors operating in the near-infrared (0.75−1.4 μm) and short-wave infrared (1.4−3.0 μm) portion ofthe electromagnetic spectrum are key components in many optical systems.Here, we report on a combined experimental and theoretical study of squaremillimeter array infrared photodetectors comprising 3 million n+−i−n+ In Pnanowires grown by MOVPE from periodically ordered Au seed particles. Thenominal i-segment, comprising 20 InAs0.40P0.60 quantum discs, was grown byuse of an optimized Zn doping to compensate the nonintentional n-doping.The photodetectors exhibit bias- and power-dependent responsivities reachingrecord-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60nW, both at 3.5 V bias. Moreover, due to the embedded quantum discs, thephotoresponse covers a broad spectral range from about 0.70 to 2.5 eV, ineffect outperforming conventional single InGaAs detectors and dual Si/Gedetectors. The high responsivity, and related gain, results from a novel proposed photogating mechanism, induced by the complex charge carrier dynamics involving optical excitation and recombination in the quantum discs and interface traps, which reduces the electron transport barrier between the highly doped ncontact and the i-segment. The experimental results obtained are in perfect agreement with the proposed theoretical model and represent a significant step forward toward understanding gain in nanoscale photodetectors and realization of commercially viable broadband photon detectors with ultrahigh gain. © 2019 American Chemical Society.

  • 2.
    Karimi, Mohammad
    et al.
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Solid State Physics and NanoLund, Department of Physics, Lund University, Lund, Sweden.
    Zeng, Zulu
    Solid State Physics and NanoLund, Department of Physics, Lund University, Lund, Sweden.
    Witzigmann, Bernd
    Computational Electronics and Photonics Group and CINSaT, University of Kassel, Germany.
    Samuelson, Lars
    Solid State Physics and NanoLund, Department of Physics, Lund University, Lund, Sweden.
    Borgström, Magnus T.
    Solid State Physics and NanoLund, Department of Physics, Lund University, Lund, Sweden.
    Pettersson, Håkan
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Högskolan i Halmstad, Akademin för ekonomi, teknik och naturvetenskap, Rydberglaboratoriet för tillämpad naturvetenskap (RLAS). Solid State Physics and NanoLund, Department of Physics, Lund University, Lund, Sweden.
    Room temperature high responsivity SWIR/NIR photodetectors based on InAsP/InP NW array heterostructures2019Inngår i: Nanowire Week: Book of Abstracts, 2019, s. 188-188Konferansepaper (Fagfellevurdert)
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