hh.sePublications
Change search
Refine search result
1 - 1 of 1
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Karthik, K. R. G.
    et al.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Andreasson, Björn Pererik
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Sun, C.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Pramana, S. S.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Varghese, B.
    Department of Physics, National University of Singapore, Singapore, Singapore.
    Sow, C. H.
    Department of Physics, National University of Singapore, Singapore, Singapore.
    Mathews, N.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Wong, L. H.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Mhaisalkar, S. G.
    School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
    Physical and Electrical Properties of Single Zn2SnO4 Nanowires2011In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 14, no 1, p. K5-K7Article in journal (Refereed)
    Abstract [en]

    Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.

1 - 1 of 1
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf