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Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 24, 244503-1-244503-9 p., 244503Article in journal (Refereed) Published
Abstract [en]

Quantum dots (QDs)-embedded photodiodes have demonstrated great potential on detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias- and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities "QD-s/WL" and "WL/GaAs" (WL: wetting layer) reflect a dominant tunneling under -0.9 V (trap-assisted tunneling from the top QDs) and a dominant thermal escape under -0.2 ~ 0.5 V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from QD s-state, a dominant tunneling from WL and an enhanced QD charging at > 190 K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially that near GaAs bandedge) as the bias and T tune (especially under -0.2 ~ 0.2 V and at > 190 K) can be well explained by the enhanced photoelectron capture in QDs with tunable charging; the dominant spectral profile with no degradation under 0.5 V is due to a saturated electron capture in charged QDs (i.e. charging neutralization). QD level simulation and schematic bandstructures help to understand these effects. © 2015 AIP Publishing LLC

Place, publisher, year, edition, pages
Melville, NY: American Institute of Physics (AIP), 2015. Vol. 118, no 24, 244503-1-244503-9 p., 244503
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-30037DOI: 10.1063/1.4937408ISI: 000367535100026ScopusID: 2-s2.0-84953857669OAI: oai:DiVA.org:hh-30037DiVA: diva2:882875
Note

This work was supported by the National Key Basic Research Program of China (Grant No. 2013CB933304), Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01010200), and the National Natural Science Foundation of China (Grant No. 61505196).

Available from: 2015-12-15 Created: 2015-12-15 Last updated: 2016-11-24Bibliographically approved

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CiteExportLink to record
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Citation style
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