InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 KShow others and affiliations
2014 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 50, no 23, p. 1731-1733Article in journal (Refereed) Published
Abstract [en]
High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K. © The Institution of Engineering and Technology 2014
Place, publisher, year, edition, pages
Stevenage, United Kingdom: The Institution of Engineering and Technology , 2014. Vol. 50, no 23, p. 1731-1733
Keywords [en]
Quantum dots, photodetectors, QWIPS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-27516DOI: 10.1049/el.2014.2437ISI: 000344942600045Scopus ID: 2-s2.0-84912136838OAI: oai:DiVA.org:hh-27516DiVA, id: diva2:781787
2015-01-192015-01-192022-09-06Bibliographically approved