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InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea.
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Lund Univ, Solid State Phys & Nanometer Struct Consortium, Lund, Sweden. (Nanovetenskap)
Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea.
Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea.
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2014 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 50, no 23, 1731-1733 p.Article in journal (Refereed) Published
Abstract [en]

High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K. © The Institution of Engineering and Technology 2014

Place, publisher, year, edition, pages
Stevenage, United Kingdom: The Institution of Engineering and Technology , 2014. Vol. 50, no 23, 1731-1733 p.
Keyword [en]
Quantum dots, photodetectors, QWIPS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-27516DOI: 10.1049/el.2014.2437ISI: 000344942600045Scopus ID: 2-s2.0-84912136838OAI: oai:DiVA.org:hh-27516DiVA: diva2:781787
Available from: 2015-01-19 Created: 2015-01-19 Last updated: 2017-03-16Bibliographically approved

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