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Photocarrier generation in CuxO thin films deposited by radio frequency sputtering
Energy Research Institute at NTU (ERIatN), Singapore, Singapore.
Energy Research Institute at NTU (ERIatN), Singapore, Singapore.
Energy Research Institute at NTU (ERIatN), Singapore, Singapore.ORCID iD: 0000-0002-3764-4235
School of Material Science and Engineering, Nanyang Technological University, Singapore, Singapore.
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 3, Article number: 032101- p.Article in journal (Refereed) Published
Abstract [en]

Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu 2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases. © 2013 American Institute of Physics.

Place, publisher, year, edition, pages
College Park, MD: American Institute of Physics (AIP), 2013. Vol. 102, no 3, Article number: 032101- p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-26521DOI: 10.1063/1.4788680ISI: 000314032600045Scopus ID: 2-s2.0-84872934025OAI: oai:DiVA.org:hh-26521DiVA: diva2:747665
Available from: 2014-09-17 Created: 2014-09-17 Last updated: 2015-02-10Bibliographically approved

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Andreasson, Björn Pererik
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CiteExportLink to record
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