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Oxide nanowire networks and their electronic and optoelectronic characteristics
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
Department of Physics, National University of Singapore, Singapore, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
NUS Nanoscience and Nanotechnology Initiative, Faculty of Engineering, National University of Singapore, Singapore, Singapore.
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2010 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 2, no 10, 1984-1998 p.Article in journal (Refereed) Published
Abstract [en]

Oxide nanowire networks or oxide nanonets leverage some of the exceptional functionalities of one-dimensional nanomaterials along with the fault tolerance and flexibility of interconnected nanowires to creating exciting opportunities in large-area electronics as well as green energy systems. This paper reviews the electronic and optoelectronic properties of these networks and highlights their potential applications in field-effect transistors, optoelectronic devices, and solar cells. Techniques to grow nanowires and their subsequent integration into networks using contact printing and electrospinning are described. Electrical properties of field-effect transistors fabricated from contact printed nanowire networks are discussed, and means of integration of the nanowire networks of heterogenous materials that enable ambipolar device operation are outlined. Photocurrent properties of these nanowires are described, including the dye sensitization of large-bandgap SnO2 nanowires. The final section deals with the advantages of employing nanowire networks in dye-sensitized solar cells and the dependence of solar cell performance on morphology and surface area. © The Royal Society of Chemistry 2010.

Place, publisher, year, edition, pages
Cambridge: RSC Publishing, 2010. Vol. 2, no 10, 1984-1998 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-26523DOI: 10.1039/c0nr00285bISI: 000282686200012Scopus ID: 2-s2.0-77957921895OAI: oai:DiVA.org:hh-26523DiVA: diva2:747664
Available from: 2014-09-17 Created: 2014-09-17 Last updated: 2015-02-24Bibliographically approved

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