hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Physical and Electrical Properties of Single Zn2SnO4 Nanowires
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.ORCID iD: 0000-0002-3764-4235
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
Show others and affiliations
2011 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, Vol. 14, no 1, K5-K7 p.Article in journal (Refereed) Published
Abstract [en]

Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.

Place, publisher, year, edition, pages
Pennington, NJ: Electrochemical Society, 2011. Vol. 14, no 1, K5-K7 p.
Keyword [en]
carrier mobility, defect states, electrical resistivity, energy gap, nanowires, photoluminescence, semiconductor materials, semiconductor quantum wires, zinc compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-26522DOI: 10.1149/1.3505875ISI: 000284317600032Scopus ID: 2-s2.0-78751549000OAI: oai:DiVA.org:hh-26522DiVA: diva2:747663
Available from: 2014-09-17 Created: 2014-09-17 Last updated: 2015-02-24Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Andreasson, Björn Pererik
In the same journal
Electrochemical and solid-state letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 96 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf