Origin of oxygen vacancies in resistive switching memory devicesShow others and affiliations
2009 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 190, p. Article number: 012074-
Article in journal (Refereed) Published
Abstract [en]
The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode. © 2009 IOP Publishing Ltd.
Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2009. Vol. 190, p. Article number: 012074-
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-26525DOI: 10.1088/1742-6596/190/1/012074ISI: 000275152100075Scopus ID: 2-s2.0-73349128742OAI: oai:DiVA.org:hh-26525DiVA, id: diva2:747660
Conference
14th International Conference on X-Ray Absorption Fine Structure (XAFS14), Camerino, Italy, July 26-31, 2009
2014-09-172014-09-172017-12-05Bibliographically approved