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Role of oxygen vacancies in cr-doped SrTiO3 for resistance-change memory
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
IBM Research, Zurich Research Laboratory, Rüschlikon, Switzerland.
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
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2007 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, no 17, p. 2232-2235Article in journal (Refereed) Published
Abstract [en]

A high density of oxygen vacancies has been found in an experiment to determine the path of electrical conduction in Cr-doped SrTiO3 memory cells. The Cr acts as a seed for the localization of oxygen vacancies, leading to a statistically homogeneous distribution of charge carriers within the path. This warrants a controllable doping profile and improved device scaling down to the nanometer scale. The combination of laterally resolved micro-X-ray absorption spectroscopy and thermal imaging concludes that the resistance switching in Cr-doped SrTiO3 originates from an oxygen-vacancy drift to/from the electrode that was used as anode during the conditioning process. The experiments shows that this oxygen vacancy concept is crucial for the entire class of transition-metal-oxide-based bipolar resistance-change memory.

Place, publisher, year, edition, pages
Weinheim: Wiley-VCH Verlagsgesellschaft, 2007. Vol. 19, no 17, p. 2232-2235
Keywords [en]
Metallic Conductivity, Data storage, Perovskites, Transition metals
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-26528DOI: 10.1002/adma.200602915ISI: 000249512900007Scopus ID: 2-s2.0-34548656097OAI: oai:DiVA.org:hh-26528DiVA, id: diva2:747654
Available from: 2014-09-17 Created: 2014-09-17 Last updated: 2017-12-05Bibliographically approved

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Andreasson, Björn Pererik

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