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Friction measurements on InAs NWs by AFM manipulation
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. (Nanovetenskap)
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. (Nanovetenskap)
Lund University, Lund, Sweden. (Nanometerkonsortiet)
Leipzig University, Leipzig, Germany.
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2008 (English)Conference paper, Poster (Refereed)
Abstract [en]

We discuss a new approach to measure the friction force between elastically deformed nanowires and a surface. The wires are bent, using an AFM, into an equilibrium shape determined by elastic restoring forces within the wire and friction between the wire and the surface. From measurements of the radius of curvature of the bent wires, elasticity theory allows the friction force per unit length to be calculated. We have studied friction properties of InAs nanowires deposited on SiO2, silanized SiO2 and Si3N4 substrates. The wires were typically from 0.5 to a few microns long, with diameters varying between 20 and 80 nm. Manipulation is done in a `Retrace Lift' mode, where feedback is turned off for the reverse scan and the tip follows a nominal path. The effective manipulation force during the reverse scan can be changed by varying an offset in the height of the tip over the surface. We will report on interesting static- and sliding friction experiments with nanowires on the different substrates, including how the friction force per unit length varies with the diameter of the wires.

Place, publisher, year, edition, pages
2008.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-22398OAI: oai:DiVA.org:hh-22398DiVA: diva2:625146
Conference
2008 American Physical Society March Meeting (APS 2008), March 10–14, 2008, New Orleans, Louisiana, USA
Available from: 2013-06-04 Created: 2013-06-04 Last updated: 2014-02-03Bibliographically approved

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http://meetings.aps.org/link/BAPS.2008.MAR.K1.195

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