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Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
Industrial Nano- and Microtechnology, Acreo AB, Kista, Sweden.
Department of Physics, Chemistry and Biology (LFM), Linköping University, Linköping, Sweden.
Synchrotron Radiation Research, Lund University, Lund, Sweden.
IRnova, Kista, Sweden.
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2006 (English)In: Proceedings of SPIE: The International Society for Optical Engineering / [ed] James G. Grate, Francois Kajzar & Mikael lindgren, Bellingham, Wash.: SPIE - International Society for Optical Engineering, 2006, U51-U63 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.5Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 × 10 10 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 μm and a full width at half maximum (FWHM) of 1.1 μm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 μm to 9.5 μm was demonstrated, by reversing the bias of the detector.

Place, publisher, year, edition, pages
Bellingham, Wash.: SPIE - International Society for Optical Engineering, 2006. U51-U63 p.
Series
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6401
Keyword [en]
Dark current, DWELL, GaAs, InAs, MOVPE, Photocurrent, QDIP, QWIP, Responsivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-22379DOI: 10.1117/12.690010ISI: 000243917600006Scopus ID: 2-s2.0-33846198353ISBN: 978-0-8194-6499-6 OAI: oai:DiVA.org:hh-22379DiVA: diva2:624765
Conference
Optical Materials in Defence Systems Technology III, Stockholm, Sweden, 13-14 September, 2006
Note

Article number: 640109

Available from: 2013-06-03 Created: 2013-06-03 Last updated: 2015-02-12Bibliographically approved

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