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Electron transport in Mn+ implanted GaAs nanowires
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP). Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Spintronics)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Spintronics)
Institute for Solid State Physics, Jena University, Jena, Germany. (Ion-Implantation)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Nanowire Growth)
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2012 (English)Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

Mn-doped GaAs semiconductors have generated great interest in current research regarding the evolution from a paramagnetic insulator to a ferromagnetic metal governed by a carrier mediated exchange interaction. The interplay between the charge carriers in a semiconductor and the electron spin of incorporated ferromagnetic metals can be utilized for novel spin-sensitive spintronic devices. We have fabricated highly Mn-doped, single-crystalline GaAs nanowires (NWs) by ion implantation at elevated temperatures to facilitate in-situ dynamic annealing. To exploit these nanowires in spintronic applications, a detailed understanding of fundamental charge transport mechanisms is however necessary. It is generally expected that new features, different from any bulk counterparts, will emerge in systems with reduced dimensionality e.g. quasi-1D NWs. Here we report on a detailed study of different charge transport mechanisms and localization-related effects in single Mn-doped GaAs NWs in the temperature range from 300K to 1.6K, and with magnetic fields ranging from 0T to 8T. In general, the resistance of the nanowires increases strongly from a few M* at 300K to several G* at 1.6 K. More specially, the temperature dependence displays several different interesting regimes described by distinctly different models. Furthermore, the current-voltage (I-V) characteristics becomes strongly non-linear as the temperature decreases and shows apparent power-law behavior at low temperatures. In particular, we interpret our transport data in the temperature range from 80K to 275K in terms of a variable range hopping process influenced by Mn-induced disorder in the NWs. Below 50K the magnetotransport data reveals a large negative magnetoresistance (MR) under both paralleland perpendicular magnetic fields. We are presently developing models to explain this large MR signal, including low-temperature transport mechanisms and possible magnetic interaction between Mn ions.

Place, publisher, year, edition, pages
2012.
Keyword [en]
Spintronics and spin phenomena
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-19649OAI: oai:DiVA.org:hh-19649DiVA: diva2:552980
Conference
31st International Conference on the Physics of Semiconductors (ICPS 2012), Zürich, Switzerland, July 29-August 3, 2012
Funder
Swedish Research CouncilKnut and Alice Wallenberg FoundationThe nanometer Structure Consortium at Lund University
Available from: 2012-09-18 Created: 2012-09-17 Last updated: 2017-04-25Bibliographically approved

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Citation style
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