We report on temperature-dependent charge transport in heavily doped Mn+ implanted GaAs nanowires.The results clearly demonstrate that the transport is governedby temperature-dependent hopping processes, with a crossoverbetween nearest neighbor hopping and Mott variable rangehopping at about 180 K. From detailed analysis, we haveextracted characteristic hopping energies and correspondinghopping lengths. At low temperatures, a strongly nonlinearconductivity is observed which reflects a modified hoppingprocess driven by the high electric field at large bias.