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Hopping Conduction in Mn Ion-Implanted GaAs Nanowires
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS).
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany.
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
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2012 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 12, no 9, 4838-4842 p.Article in journal, Letter (Refereed) Published
Abstract [en]

We report on temperature-dependent charge transport in heavily doped Mn+ implanted GaAs nanowires.The results clearly demonstrate that the transport is governedby temperature-dependent hopping processes, with a crossoverbetween nearest neighbor hopping and Mott variable rangehopping at about 180 K. From detailed analysis, we haveextracted characteristic hopping energies and correspondinghopping lengths. At low temperatures, a strongly nonlinearconductivity is observed which reflects a modified hoppingprocess driven by the high electric field at large bias.

Place, publisher, year, edition, pages
Washington: American Chemical Society (ACS), 2012. Vol. 12, no 9, 4838-4842 p.
Keyword [en]
mott hopping, nanowires, self-assembly, ion-implantation, GaMnAs, spintronics
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-19647DOI: 10.1021/nl302318fISI: 000308576000069PubMedID: 22889471Scopus ID: 2-s2.0-84866332692OAI: oai:DiVA.org:hh-19647DiVA: diva2:552950
Funder
Swedish Research CouncilKnut and Alice Wallenberg FoundationThe nanometer Structure Consortium at Lund University
Available from: 2012-09-18 Created: 2012-09-17 Last updated: 2013-01-30Bibliographically approved

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