hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Nanoscaled Ferromagnetic Single-Electron Transistors
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab.
Solid State Physics/ the Nanometer Structure Consortium, Lund University, Sweden.
Dept of Chemistry and Biomedical Sciences, Kalmar University, Sweden.
Show others and affiliations
2007 (English)In: 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, Piscataway, N.J.: IEEE Press, 2007, 420-421 p.Conference paper, Published paper (Other academic)
Abstract [en]

We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices.

Place, publisher, year, edition, pages
Piscataway, N.J.: IEEE Press, 2007. 420-421 p.
Keyword [en]
Spintronics, Ferromagnetic Single-Electron Transistor, Coulomb Blockad, Tunneling Magnetoresistance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:hh:diva-18860DOI: 10.1109/NANO.2007.4601223ISI: 000261434900096Scopus ID: 2-s2.0-52949147451ISBN: 978-1-4244-0607-4 OAI: oai:DiVA.org:hh-18860DiVA: diva2:537662
Conference
7th IEEE Conference on Nanotechnology Location, Hong Kong, PEOPLES R CHINA, AUG 02-05, 2007
Note

©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Available from: 2012-06-27 Created: 2012-06-25 Last updated: 2012-10-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Liu, RuishengPettersson, Håkan
By organisation
MPE-lab
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 125 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf