hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany.
Avd. f. Fasta tillståndets fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta tillståndets fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta tillståndets fysik, Lunds Universitet / Tillämpad matematik och fysik (MPE-lab), MPE-lab. (Nanometerkonsortiet)
Show others and affiliations
2011 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, no 9, 3935-3940 p.Article in journal (Refereed) Published
Abstract [en]

We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.

Place, publisher, year, edition, pages
Washington: American Chemical Society (ACS), 2011. Vol. 11, no 9, 3935-3940 p.
Keyword [en]
DMS, doping, dynamic annealing, GaAs, GaMnAs, ion-implantation, Nanospintronics, Nanowires
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:hh:diva-16458DOI: 10.1021/nl2021653ISI: 000294790200073PubMedID: 21848314Scopus ID: 2-s2.0-80052786045OAI: oai:DiVA.org:hh-16458DiVA: diva2:448313
Available from: 2011-10-15 Created: 2011-10-15 Last updated: 2017-05-22Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textPubMedScopus

Search in DiVA

By author/editor
Paschoal, WaldomiroPettersson, Håkan
By organisation
MPE-lab
In the same journal
Nano letters (Print)
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 260 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf