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Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors
Acreo AB.
IFM, Linköping University.
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. (Nanovetenskap)
IRnova.
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2009 (English)In: Infrared physics & technology, ISSN 1350-4495, Vol. 52, no 6, 272-275 p.Article in journal (Refereed) Published
Abstract [en]

Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels.

Place, publisher, year, edition, pages
Exeter: Pergamon Press, 2009. Vol. 52, no 6, 272-275 p.
Keyword [en]
Infrared detectors, Quantum dots, QDIPS
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:hh:diva-16456DOI: 10.1016/j.infrared.2009.05.025ISI: 000273240700013Scopus ID: 2-s2.0-70649095339OAI: oai:DiVA.org:hh-16456DiVA: diva2:448309
Available from: 2011-10-15 Created: 2011-10-15 Last updated: 2012-10-16Bibliographically approved

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