hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Nano-Schottky contacts realized by bottom-up technique
Avd. f. Fasta Tillståndets Fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta Tillståndets Fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta Tillståndets Fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Materialkemi, Lunds Universitet. (Nanometerkonsortiet)
Show others and affiliations
2010 (English)In: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings / [ed] Chu, PKI, Piscataway, N.J.: IEEE Press, 2010, 252-253 p.Conference paper, (Refereed)
Abstract [en]

Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

Place, publisher, year, edition, pages
Piscataway, N.J.: IEEE Press, 2010. 252-253 p.
Keyword [en]
III-V semiconductors, Schottky barriers, catalysis, epitaxial growth, gallium compounds, indium compounds, nanowires, photodetectors, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum wires
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-14192DOI: 10.1109/INEC.2010.5424667ISI: 000282026500128Scopus ID: 2-s2.0-77951661599ISBN: 978-1-4244-3543-2 OAI: oai:DiVA.org:hh-14192DiVA: diva2:390910
Conference
INEC 2012 - 3rd International Nanoelectronics Conference, 3-8 january, Hong Kong, China, 2010
Available from: 2011-01-25 Created: 2011-01-24 Last updated: 2012-10-31Bibliographically approved

Open Access in DiVA

fulltext(245 kB)233 downloads
File information
File name FULLTEXT01.pdfFile size 245 kBChecksum SHA-512
4321bd8dd45fe57d97931840317e9a654ed18d5c009d68de5ce7af1dfba723c37a5da7b968207bb2a9584ca13d7f8476dbb1eeb0bb523cf129151e56d7a9c1ae
Type fulltextMimetype application/pdf

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Pettersson, Håkan
By organisation
MPE-lab
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 233 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 165 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf