Friction measurements of InAs nanowires on Silicon nitride by AFM manipulationShow others and affiliations
2009 (English)In: Small, ISSN 1613-6810, Vol. 5, no 2, p. 203-207Article in journal (Refereed) Published
Abstract [en]
A study was conducted to perform friction measurements of InAs nanowires (NW) on silicon nitride (Si 3N 4) through atomic force microscopy (AFM) manipulation. The investigations revealed the friction force per unit length for sliding and static friction over a range of nanowire diameters. It was found that there is a significant difference between the coefficients of the two sliding modes for large wires. It was also found that the difference between the two sliding modes disappears at smaller diameters and the sliding friction becomes equal with the static friction. The AFM investigations were performed on a Nanoscope IIIa Dimension 3100, using rectangular cantilevers, with a nominal spring constant of 30 N m -1. The nanowires were manipulated, using the 'Retrace Lift' mode of the AFM controller. The friction force per unit length was gathered from the local curvature of the NWs, using standard elasticity theory.
Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2009. Vol. 5, no 2, p. 203-207
Keywords [en]
AFM, friction, nanomanipulation, nanotechnology, tribology, SEMICONDUCTOR NANOWHISKERS, CONTACT, SCALE
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3376DOI: 10.1002/smll.200800794ISI: 000263088700009Scopus ID: 2-s2.0-59449088953OAI: oai:DiVA.org:hh-3376DiVA, id: diva2:300180
2010-02-252009-12-012018-04-03Bibliographically approved