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Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
Acreo AB.
Linköping University.
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).ORCID iD: 0000-0001-5027-1456
IRnova.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 10, p. 103501-Article in journal (Refereed) Published
Abstract [en]

The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2008. Vol. 93, no 10, p. 103501-
Keywords [en]
Dark currents, Electric current measurement, Infrared detectors, Optical waveguides, Optoelectronic devices, Photocurrents, Photodetectors, Quantum electronics
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3409DOI: 10.1063/1.2977757ISI: 000259797000101Scopus ID: 2-s2.0-51749103520OAI: oai:DiVA.org:hh-3409DiVA, id: diva2:295222
Available from: 2010-02-17 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Pettersson, Håkan

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