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Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors
Acreo AB.
Linköping University.
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).ORCID iD: 0000-0001-5027-1456
IRnova.
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2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 5, p. 053503-Article in journal (Refereed) Published
Abstract [en]

Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. A selective increase in the electron population in the different quantum dot energy levels enabled the low temperature photocurrent peaks observed at 120 and 148 meV to be identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively. The response was increased by a factor of 10 through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2009. Vol. 94, no 5, p. 053503-
Keyword [en]
OPTICAL pumping, OPTOELECTRONIC devices, SEMICONDUCTOR doping, QUANTUM dots, ELECTRONS, ENERGY levels (Quantum mechanics)
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3418DOI: 10.1063/1.3073048ISI: 000263167000076Scopus ID: 2-s2.0-59849125109OAI: oai:DiVA.org:hh-3418DiVA, id: diva2:295214
Available from: 2010-02-17 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Pettersson, Håkan

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