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Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
Acreo AB, Kista, Sweden.
Acreo AB, Kista, Sweden.
Acreo AB, Kista, Sweden.
Acreo AB, Kista, Sweden.
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 21, p. 213510-Article in journal (Refereed) Published
Abstract [en]

Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2006. Vol. 88, no 21, p. 213510-
Keywords [en]
OPTICAL detectors, INFRARED detectors, QUANTUM dots, QUANTUM wells, GALLIUM arsenide semiconductors, INDIUM arsenide, PHOTOLUMINESCENCE
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3416DOI: 10.1063/1.2207493ISI: 000237846800099Scopus ID: 2-s2.0-33744548799OAI: oai:DiVA.org:hh-3416DiVA, id: diva2:295204
Available from: 2010-02-17 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Pettersson, Håkan

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