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Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).ORCID iD: 0000-0001-5027-1456
Kalmar University.
Kalmar University.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 12, p. 123111-Article in journal (Refereed) Published
Abstract [en]

The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island.

Place, publisher, year, edition, pages
New York: American Institute of Physics , 2007. Vol. 90, no 12, p. 123111-
Keywords [en]
Cobalt, Nickel, Ferromagnetic materials, Single electron transistors, Tunnelling magnetoresistance, Magnetoresistive devices, Coercive force, Magnetic anisotropy, Magnons
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3466DOI: 10.1063/1.2714289ISI: 000245135800095Scopus ID: 2-s2.0-33947600114OAI: oai:DiVA.org:hh-3466DiVA, id: diva2:293387
Available from: 2010-02-11 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Liu, RuishengPettersson, Håkan

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