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Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).
Kalmar University.
Kalmar University.
Lund University.
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2008 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 8, no 3, p. 848-852Article in journal (Refereed) Published
Abstract [en]

We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

Place, publisher, year, edition, pages
Washington: American Chemical Society , 2008. Vol. 8, no 3, p. 848-852
Keywords [en]
Current directions, Density of state, Ferromagnetic layers, Future applications, Magnetization - reversals, Magnetization directions, Nanoscaled, Relative orientations, Spin valves, Spin-orbit interactions, Spintronics devices, Tunneling anisotropic magnetoresistances, Tunneling magnetoresistances
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3465DOI: 10.1021/nl072985pISI: 000253947400015Scopus ID: 2-s2.0-56849092725OAI: oai:DiVA.org:hh-3465DiVA, id: diva2:293377
Available from: 2010-02-11 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Liu, RuishengPettersson, Håkan

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