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Shear stress measurements on InAs nanowires by AFM manipulation
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).
Lund University.
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Applied Mathematics and Physics (CAMP).
Lund University.
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2007 (English)In: Small, ISSN 1613-6810, Vol. 3, no 8, p. 1398-1401Article in journal (Refereed) Published
Abstract [en]

On an upward curve? The curvature of an elastically deformed nanowire pinned to a flat surface contains information about the maximum static friction force, and hence the shear stress, between the nanowire and the surface. Here, InAs nanowires are bent in a controlled manner using the tip of an atomic force microscope (see image). The shear stress can be obtained from a simple analysis according to the standard theory of elasticity.

Place, publisher, year, edition, pages
Weinheim: Wiley-VCH Verlagsgesellschaft, 2007. Vol. 3, no 8, p. 1398-1401
Keywords [en]
atomic force microscopy, deformation, indium arsenide, nanowires
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hh:diva-3362DOI: 10.1002/smll.200700052ISI: 000248641600017Scopus ID: 2-s2.0-34547850195OAI: oai:DiVA.org:hh-3362DiVA, id: diva2:282150
Available from: 2009-12-18 Created: 2009-12-01 Last updated: 2018-04-03Bibliographically approved

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Bordag, MichaelConache, GabrielaPettersson, Håkan

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