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Photoexcitation of excitons in self-assembled quantum dots
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS).ORCID iD: 0000-0001-5027-1456
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS).
Division of Solid State Physics, Lund University, Lund, Sweden.
Division of Solid State Physics, Lund University, Lund, Sweden.
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 21, p. 5046-5048Article in journal (Refereed) Published
Abstract [en]

Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2004. Vol. 85, no 21, p. 5046-5048
Keywords [en]
Electronics, Fourier transformations, Infrared spectroscopy, Microelectronics, Lolecular electronics, Quantum electronics, Quantum dots
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:hh:diva-207DOI: 10.1063/1.1824174ISI: 000225300600073Scopus ID: 2-s2.0-19144366094Local ID: 2082/492OAI: oai:DiVA.org:hh-207DiVA, id: diva2:237385
Available from: 2006-11-23 Created: 2006-11-23 Last updated: 2018-04-03Bibliographically approved

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Pettersson, HåkanLandin, Lars

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Citation style
  • apa
  • harvard1
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Language
  • de-DE
  • en-GB
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  • nn-NB
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  • Other locale
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Output format
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