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Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS).ORCID iD: 0000-0001-5027-1456
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), Halmstad Embedded and Intelligent Systems Research (EIS).
Division of Solid State Physics, Lund University, Lund, Sweden.
Division of Solid State Physics, Lund University, Lund, Sweden.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 4, p. 1829-1831Article in journal (Refereed) Published
Abstract [en]

The results from photoconductivity (PC) measurements on InAs dots embedded in InP are presented. The PC technique is recently applied to the study of InAs dots embedded in matrices of GaAs and Al0.3Ga0.7As matrix, respectively. It is demonstrated that this technique reveals important new physical insight into the electronic structure of the InAs/InP dots, information that cannot easily be obtained by other techniques.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2004. Vol. 95, no 4, p. 1829-1831
Keywords [en]
Conduction band, Electric conductivity, Free electron theory of metals, Quantum dots
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:hh:diva-203DOI: 10.1063/1.1638892ISI: 000188654100033Scopus ID: 2-s2.0-1542306860Local ID: 2082/488OAI: oai:DiVA.org:hh-203DiVA, id: diva2:237381
Available from: 2006-11-23 Created: 2006-11-23 Last updated: 2018-04-03Bibliographically approved

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Pettersson, HåkanLandin, Lars

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