hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Pure Magnetic Memory-Based PUFs: A Secure and Lightweight Solution for IoT Devices
Iran University of Science and Technology, Tehran, Iran.ORCID iD: 0000-0002-6081-5098
Iran University of Science and Technology, Tehran, Iran.ORCID iD: 0000-0003-0232-9267
Halmstad University, School of Information Technology.ORCID iD: 0000-0002-2874-6256
Niroo Research Institute, Tehran, Iran.ORCID iD: 0000-0002-7079-1667
2023 (English)In: Iranian Journal of Electrical and Electronic Engineering, ISSN 2383-3890, Vol. 19, no 4, article id 2944Article in journal (Refereed) Published
Abstract [en]

In light of the growing prevalence of Internet of Things (IoT) devices, it has become essential to incorporate cryptographic protection techniques for high-security applications. Since IoT devices are resource-constraints in terms of power and area, finding cost-effective ways to enhance their security is necessary. Physical unclonable function (PUF) is considered a trusted hardware security mechanism that generates true and intrinsic randomness by extracting the inherent process variations of circuits. In this paper, a novel pure magnetic memory-based PUF is presented. The fundamental building blocks of the proposed PUF design are magnetic devices, the so-called mCells. These magnetoresistive devices exclusively utilize Magnetic Tunnel Junction (MTJ) components. Using purely MTJ in the main memory and sense amplifier in the proposed PUF leads to high randomness, high reliability, low power, and ultra-compact occupation area. The Monte Carlo HSPICE simulation results demonstrate that the proposed PUF achieves a uniqueness of 49.89%, uniformity of 50.02 %, power consumption of 1.43 µW, and an area occupation of 0.01 µm2 per bit. © 2023, Iran University of Science and Technology. All rights reserved.

Place, publisher, year, edition, pages
Tehran: Iran University of Science and Technology , 2023. Vol. 19, no 4, article id 2944
Keywords [en]
Magnetic Tunnel Junction (MTJ), Memory-based PUF, nonVolatile Memory (NVM), Physically Unclonable Function (PUF)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hh:diva-52404DOI: 10.22068/IJEEE.19.4.2944Scopus ID: 2-s2.0-85181212237OAI: oai:DiVA.org:hh-52404DiVA, id: diva2:1827712
Available from: 2024-01-15 Created: 2024-01-15 Last updated: 2024-01-15Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records

Fazeli, Mahdi

Search in DiVA

By author/editor
Akbari, MaryamMirzakuchaki, SattarFazeli, MahdiTarihi, Mohammad Reza
By organisation
School of Information Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 126 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf