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Assembling ferromagnetic single-electron transistors with atomic force microscopy
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Solid State Physics and the Nanometer Structure Consortium, Lund University, Sweden.ORCID iD: 0000-0001-5027-1456
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. Solid State Physics and the Nanometer Structure Consortium, Lund University, Sweden.
Solid State Physics and the Nanometer Structure Consortium, Lund University, Sweden.
Solid State Physics and the Nanometer Structure Consortium, Lund University, Sweden.
2016 (English)In: Nanostructures in Electronics and Photonics / [ed] Faiz Rahman, London: Pan Stanford Publishing, 2016, 2, p. 29-40Chapter in book (Other academic)
Abstract [en]

Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFMassembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision. © 2008 by Taylor & Francis Group, LLC.

Place, publisher, year, edition, pages
London: Pan Stanford Publishing, 2016, 2. p. 29-40
National Category
Condensed Matter Physics
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URN: urn:nbn:se:hh:diva-41528Scopus ID: 2-s2.0-85052763609ISBN: 9789814241120 (electronic)ISBN: 9789814241106 (print)OAI: oai:DiVA.org:hh-41528DiVA, id: diva2:1602686
Available from: 2021-10-13 Created: 2021-10-13 Last updated: 2021-10-13Bibliographically approved

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Pettersson, HåkanLiu, Ruisheng S.

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