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Electrical transport properties of InAs nanowires synthesized by a solvothermal method
Department of Physics, Central University of Rajasthan, Ajmer, India.
Department of Physics, Malaviya National Institute of Technology, Jaipur, India.
Centro de Ciências Naturais e Tecnologia;, Universidade Do Estado Do Pará, Belém, PA, Brazil.
Programa de Pós-Graduação em Física, Universidade Federal Do Pará, Belém, PA, Brazil.
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2020 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 31, no 23, article id 235709Article in journal (Refereed) Published
Abstract [en]

Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2020. Vol. 31, no 23, article id 235709
Keywords [en]
InAs nanowires, solvothermal growth, space-charge-limited current
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-43222DOI: 10.1088/1361-6528/ab78adISI: 000521955500001PubMedID: 32084656Scopus ID: 2-s2.0-85082147239OAI: oai:DiVA.org:hh-43222DiVA, id: diva2:1475644
Note

Funding Agency:

Ministry of Electronics and Information Technology, Govt. of India at the Indian Institute of Science, Bengaluru  

Department of Science & Technology (India) Grant Number: YSS/2015/001403

University Grants Commission, India Grant Number: F4-5(112-FRP)/2014(BSR)

Inter-University Accelerator CentreGrant Number:  IUAC/XIII.7/UFR-58322

National Council for Scientific and Technological Development (CNPq)

 CAPES

 Ciencia Tecnologia e Inovacao (FINEP)

Available from: 2020-10-13 Created: 2020-10-13 Last updated: 2021-05-11Bibliographically approved

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Pettersson, Håkan

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