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Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation
Inst Fed Educ, Ciencia & Tecnol Para, BR-68440000 Abaetetuba, PA, Brazil.;Univ Fed Para, Programa Posgrad Fis, BR-66075110 Belem, Para, Brazil..
Cent Univ Rajasthan, Dept Phys, Ajmer 305817, India..ORCID iD: 0000-0002-5963-015X
Univ Fed Para, Programa Posgrad Fis, BR-66075110 Belem, Para, Brazil..
Cent Univ Rajasthan, Dept Phys, Ajmer 305817, India..
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2019 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 30, no 33, article id 335202Article in journal (Refereed) Published
Abstract [en]

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm(-1)) observed in Mn ion-implanted NWs, which we attribute to E-g (TO) and A(1g )(LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 30, no 33, article id 335202
Keywords [en]
nanowires, Mn ion implantation, surface optical phonons, spintronics, Raman spectroscopy
Identifiers
URN: urn:nbn:se:hh:diva-41450DOI: 10.1088/1361-6528/ab1beaISI: 000468881500001PubMedID: 31018190Scopus ID: 2-s2.0-85067269466OAI: oai:DiVA.org:hh-41450DiVA, id: diva2:1390239
Available from: 2020-01-31 Created: 2020-01-31 Last updated: 2020-02-03Bibliographically approved

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Pettersson, Håkan

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