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High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID iD: 0000-0002-3160-8540
Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID iD: 0000-0002-6269-2415
Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel, Germany.
Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID iD: 0000-0003-1971-9894
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992Article in journal, Editorial material (Refereed) Published
Abstract [en]

High-performance photodetectors operating in the near-infrared (0.75−1.4 μm) and short-wave infrared (1.4−3.0 μm) portion ofthe electromagnetic spectrum are key components in many optical systems.Here, we report on a combined experimental and theoretical study of squaremillimeter array infrared photodetectors comprising 3 million n+−i−n+ In Pnanowires grown by MOVPE from periodically ordered Au seed particles. Thenominal i-segment, comprising 20 InAs0.40P0.60 quantum discs, was grown byuse of an optimized Zn doping to compensate the nonintentional n-doping.The photodetectors exhibit bias- and power-dependent responsivities reachingrecord-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60nW, both at 3.5 V bias. Moreover, due to the embedded quantum discs, thephotoresponse covers a broad spectral range from about 0.70 to 2.5 eV, ineffect outperforming conventional single InGaAs detectors and dual Si/Gedetectors. The high responsivity, and related gain, results from a novel proposed photogating mechanism, induced by the complex charge carrier dynamics involving optical excitation and recombination in the quantum discs and interface traps, which reduces the electron transport barrier between the highly doped ncontact and the i-segment. The experimental results obtained are in perfect agreement with the proposed theoretical model and represent a significant step forward toward understanding gain in nanoscale photodetectors and realization of commercially viable broadband photon detectors with ultrahigh gain. © 2019 American Chemical Society.

Place, publisher, year, edition, pages
Washington, DC: American Chemical Society (ACS), 2019.
Keywords [en]
Nanowires, infrared photodetectors, nanowire array photodetectors, optical gain, photogating, interface traps, quantum discs, discs-in-nanowires
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:hh:diva-41068DOI: 10.1021/acs.nanolett.9b02494PubMedID: 31721593OAI: oai:DiVA.org:hh-41068DiVA, id: diva2:1374779
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation, 2016.0089Swedish Foundation for Strategic Research Swedish Energy Agency, P38331-1
Note

Other funders: NanoLund & the Swedish National Board for Industrial and Technological Development & Erik Johan Ljungberg Foundation &  Carl Trygger Foundation &  European Union’s Horizon 2020 research and innovation program under Grant Agreement 641023 (NanoTandem) & National Center for High Resolution Electron Microscopy (nCHREM) at Lund University.

Available from: 2019-12-02 Created: 2019-12-02 Last updated: 2019-12-03

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Karimi, MohammadPettersson, Håkan

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