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Electro-optical characterisation of inp nanowire based p-n, p-i-n infrared photodetectors
Halmstad University, School of Information Technology. amin_m154@yahoo.com.
Halmstad University, School of Information Technology. obai_aust@yahoo.com.
2012 (English)In: Journal of Communications, ISSN 1796-2021, E-ISSN 1796-2021, Vol. 7, no 11, p. 808-820Article in journal (Refereed) Published
Abstract [en]

High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3-1.55 pm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultraviolet into the electrical signal that is convenient for measurement. Since the last decade, the electro-optical characterisation of photodetectors has been investigated to improve their performance and price. In this paper, we are going to discuss the characterisation of the two different type infrared photodectors based on nanowire that we have worked on our project. One photodetector is p- n nanowire structure, and another is p-i-n structure. Both photodetectors is worked based on internal photoelectric effect and on the theory of p-n junction. We investigated the detector performance at 77K-300K temperature corresponding with wavelength in darkness and under illumination as regarding breakdown voltage, sensitivity, and quantum efficiency. We have also compared the differences between the two photodetectors performance characteristics. © 2012 ACADEMY PUBLISHER.

Place, publisher, year, edition, pages
Rowland Heights, CA: Engineering and Technology Publishing , 2012. Vol. 7, no 11, p. 808-820
Keywords [en]
High conversion efficiency, High speed photodetectors, InP, Internal photoelectric effect, IR photodetectors, Large wavelength range, NWs, Performance characteristics, Bit error rate, Nanowires, Optoelectronic devices, Photodetectors, Semiconductor junctions, Signal to noise ratio, Photons
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hh:diva-37448DOI: 10.4304/jcm.7.11.808-820Scopus ID: 2-s2.0-84878104087OAI: oai:DiVA.org:hh-37448DiVA, id: diva2:1242971
Available from: 2018-08-29 Created: 2018-08-29 Last updated: 2018-08-29Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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