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Corrigendum: Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires (2014 J. Phys. D: Appl. Phys. 47 394003)
Institute for Solid State Physics, Friedrich-Schiller-University Jena, Jena, Germany.
Institute for Solid State Physics, Friedrich-Schiller-University Jena, Jena, Germany.
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.ORCID iD: 0000-0002-2348-1244
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
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2015 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 48, no 7, article id 079501Article in journal (Refereed) Published
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Bristol: Institute of Physics Publishing (IOPP), 2015. Vol. 48, no 7, article id 079501
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Condensed Matter Physics
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URN: urn:nbn:se:hh:diva-35703DOI: 10.1088/0022-3727/48/7/079501ISI: 000348842800009Scopus ID: 2-s2.0-84961292028OAI: oai:DiVA.org:hh-35703DiVA, id: diva2:1180564
Available from: 2018-02-06 Created: 2018-02-06 Last updated: 2018-04-03Bibliographically approved

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Paschoal Jr., WaldomiroKumar, SandeepPettersson, Håkan

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