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Origin of oxygen vacancies in resistive switching memory devices
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.ORCID-id: 0000-0002-3764-4235
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
IBM Research, Zurich Research Laboratory, Rüschlikon, Switzerland.
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2009 (Engelska)Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 190, s. Article number: 012074-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode. © 2009 IOP Publishing Ltd.

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Bristol: Institute of Physics Publishing (IOPP), 2009. Vol. 190, s. Article number: 012074-
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URN: urn:nbn:se:hh:diva-26525DOI: 10.1088/1742-6596/190/1/012074ISI: 000275152100075Scopus ID: 2-s2.0-73349128742OAI: oai:DiVA.org:hh-26525DiVA, id: diva2:747660
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14th International Conference on X-Ray Absorption Fine Structure (XAFS14), Camerino, Italy, July 26-31, 2009
Tillgänglig från: 2014-09-17 Skapad: 2014-09-17 Senast uppdaterad: 2017-12-05Bibliografiskt granskad

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Andreasson, Björn Pererik

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