hh.sePublikationer
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Electron transport in Mn+ implanted GaAs nanowires
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (CAMP). Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Spintronics)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Spintronics)
Institute for Solid State Physics, Jena University, Jena, Germany. (Ion-Implantation)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden. (Nanowire Growth)
Visa övriga samt affilieringar
2012 (Engelska)Konferensbidrag, Poster (med eller utan abstract) (Refereegranskat)
Abstract [en]

Mn-doped GaAs semiconductors have generated great interest in current research regarding the evolution from a paramagnetic insulator to a ferromagnetic metal governed by a carrier mediated exchange interaction. The interplay between the charge carriers in a semiconductor and the electron spin of incorporated ferromagnetic metals can be utilized for novel spin-sensitive spintronic devices. We have fabricated highly Mn-doped, single-crystalline GaAs nanowires (NWs) by ion implantation at elevated temperatures to facilitate in-situ dynamic annealing. To exploit these nanowires in spintronic applications, a detailed understanding of fundamental charge transport mechanisms is however necessary. It is generally expected that new features, different from any bulk counterparts, will emerge in systems with reduced dimensionality e.g. quasi-1D NWs. Here we report on a detailed study of different charge transport mechanisms and localization-related effects in single Mn-doped GaAs NWs in the temperature range from 300K to 1.6K, and with magnetic fields ranging from 0T to 8T. In general, the resistance of the nanowires increases strongly from a few M* at 300K to several G* at 1.6 K. More specially, the temperature dependence displays several different interesting regimes described by distinctly different models. Furthermore, the current-voltage (I-V) characteristics becomes strongly non-linear as the temperature decreases and shows apparent power-law behavior at low temperatures. In particular, we interpret our transport data in the temperature range from 80K to 275K in terms of a variable range hopping process influenced by Mn-induced disorder in the NWs. Below 50K the magnetotransport data reveals a large negative magnetoresistance (MR) under both paralleland perpendicular magnetic fields. We are presently developing models to explain this large MR signal, including low-temperature transport mechanisms and possible magnetic interaction between Mn ions.

Ort, förlag, år, upplaga, sidor
2012.
Nyckelord [en]
Spintronics and spin phenomena
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:hh:diva-19649OAI: oai:DiVA.org:hh-19649DiVA, id: diva2:552980
Konferens
31st International Conference on the Physics of Semiconductors (ICPS 2012), Zürich, Switzerland, July 29-August 3, 2012
Forskningsfinansiär
VetenskapsrådetKnut och Alice Wallenbergs StiftelseThe nanometer Structure Consortium at Lund UniversityTillgänglig från: 2012-09-18 Skapad: 2012-09-17 Senast uppdaterad: 2018-04-03Bibliografiskt granskad

Open Access i DiVA

FULLTEXT01(2071 kB)134 nedladdningar
Filinformation
Filnamn ATTACHMENT01.pdfFilstorlek 2071 kBChecksumma SHA-512
57e6c044d1b22ce195a0d14fe1823ed09ff557b64247456bd1239a2fdfa7a084ae6eaeaf65db97715c24dff27ce19ea54317f9f38026d51a8dbfb4227390a358
Typ attachmentMimetyp application/pdf

Personposter BETA

Paschoal Jr., WaldomiroPettersson, Håkan

Sök vidare i DiVA

Av författaren/redaktören
Paschoal Jr., WaldomiroPettersson, Håkan
Av organisationen
Tillämpad matematik och fysik (CAMP)
Den kondenserade materiens fysik

Sök vidare utanför DiVA

GoogleGoogle Scholar
Antalet nedladdningar är summan av nedladdningar för alla fulltexter. Det kan inkludera t.ex tidigare versioner som nu inte längre är tillgängliga.

urn-nbn

Altmetricpoäng

urn-nbn
Totalt: 218 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf