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Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures
Acreo AB.
IFM, Linköping University.
IFM, Linköping University.
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS), MPE-lab. (Nanovetenskap)ORCID iD: 0000-0001-5027-1456
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2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 82, no 3, p. 035314-Article in journal (Refereed) Published
Abstract [en]

A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.

Place, publisher, year, edition, pages
Woodbury, NY: American Physical Society , 2010. Vol. 82, no 3, p. 035314-
Keywords [en]
Dot-in-well, quantum dots, photodetectors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-14201DOI: 10.1103/PhysRevB.82.035314ISI: 000280208000007Scopus ID: 2-s2.0-77956689178OAI: oai:DiVA.org:hh-14201DiVA, id: diva2:391338
Available from: 2011-01-24 Created: 2011-01-24 Last updated: 2018-10-24Bibliographically approved

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Pettersson, Håkan

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