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Magnetoresistance studies on CoAl OX Au and CoAl OX NiAu tunnel structures
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (CAMP).
Kalmar University, Kalmar, Sweden.
Lund University, Lund, Sweden.
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (CAMP).ORCID-id: 0000-0001-5027-1456
2008 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, nr 20, s. 203107-203107-3Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field. 2008 American Institute of Physics.

sted, utgiver, år, opplag, sider
New York: American Institute of Physics (AIP), 2008. Vol. 93, nr 20, s. 203107-203107-3
Emneord [en]
Tunnel junctions, Anisotropy, Coal, Coal industry, Electric resistance, Electrodes, Electronic structure, Magnetic field effects, Magnetic fields, Magnetoelectronics, Magnetoresistance, Semiconductor junctions, Spin dynamics, Tunneling (excavation), Tunnels
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Identifikatorer
URN: urn:nbn:se:hh:diva-3464DOI: 10.1063/1.3000614ISI: 000261141400050Scopus ID: 2-s2.0-56849094689OAI: oai:DiVA.org:hh-3464DiVA, id: diva2:293357
Tilgjengelig fra: 2010-02-11 Laget: 2009-12-01 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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