hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Case study of an InAs quantum dot memory: Optical storing and deletion of charge
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS).ORCID iD: 0000-0001-5027-1456
Halmstad University, School of Business, Engineering and Science, Mechanical Engineering and Industrial Design (MTEK), Fotonik och mikrovågsteknik.ORCID iD: 0000-0002-4826-019X
Division of Solid State Physics, Lund University, Sweden.
Division of Solid State Physics, Lund University, Sweden.
Show others and affiliations
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 1, p. 78-80Article in journal (Refereed) Published
Abstract [en]

We have studied self-assembled InAs quantum dots embedded in an InP matrix using photocapacitance and photocurrent spectroscopy. These dots are potentially promising for memories due to the large confinement energy for holes. In this work we have realized simple quantum dot memory by placing the dots in the space–charge region of a Schottky junction. Our measurements reveal that a maximum of about one hole can be stored per dot. We also find that illumination for an extended period deletes the stored charge. We show that these limitations do not reflect the intrinsic properties of the dots, but rather the sample structure in combination with deep traps present in the sample.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2001. Vol. 79, no 1, p. 78-80
Keywords [en]
Electronics, Photocurrent spectroscopy, Quantum dots, Indium compounds, III-V semiconductors, Semiconductor quantum dots, Photocapacitance, Photoconductivity, Self-assembly, Space charge, Schottky barriers, Deep levels, Optical storage
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:hh:diva-1840DOI: 10.1063/1.1382628ISI: 000169658800027Scopus ID: 2-s2.0-0035796722Local ID: 2082/2235OAI: oai:DiVA.org:hh-1840DiVA, id: diva2:239058
Available from: 2008-09-03 Created: 2008-09-03 Last updated: 2018-04-03Bibliographically approved

Open Access in DiVA

fulltext(94 kB)238 downloads
File information
File name FULLTEXT01.pdfFile size 94 kBChecksum SHA-512
6bbfaccb7fa104d8be0ae38efb3753e905826248e665f8fac5a1b972ddd24bee534a9f23440bf2802b2c211f688391b51fb99d771d9a1fab4d39b71b2d149f28
Type fulltextMimetype application/pdf

Other links

Publisher's full textScopus

Authority records BETA

Pettersson, HåkanBååth, Lars B.

Search in DiVA

By author/editor
Pettersson, HåkanBååth, Lars B.
By organisation
Halmstad Embedded and Intelligent Systems Research (EIS)Fotonik och mikrovågsteknik
In the same journal
Applied Physics Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 238 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 192 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf