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Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates
Lund Univ, Div Solid State Phys & NanoLund, Box 118, SE-21100 Lund, Sweden..
Lund Univ, Centr & Anal & Synth & NanoLund, POB 124, SE-21100 Lund, Sweden..ORCID-id: 0000-0002-0399-8369
Lund Univ, Div Solid State Phys & NanoLund, Box 118, SE-21100 Lund, Sweden..ORCID-id: 0000-0001-6755-1841
Lund Univ, Div Solid State Phys & NanoLund, Box 118, SE-21100 Lund, Sweden..
Vise andre og tillknytning
2020 (engelsk)Inngår i: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 12, nr 2, s. 888-894Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on the synthesis of vertical InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour-liquid-solid growth. A thick silicon oxide layer was first deposited on the substrates. The samples were then patterned by electron beam lithography and deep dry etching through the oxide layer down to the substrate surface. Gold seed particles were subsequently deposited in the holes of the pattern by the use of pulse electrodeposition. The subsequent growth of nanowires by the vapour-liquid-solid method was guided towards the [001] direction by the patterned oxide template, and displayed a high growth yield with respect to the array of holes in the template. In order to confirm the versatility and robustness of the process, we have also demonstrated guided growth of InP nanowire p-n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates. Our results show a promising route to monolithically integrate III-V nanowire heterostructure devices with commercially viable (001) silicon platforms.

sted, utgiver, år, opplag, sider
ROYAL SOC CHEMISTRY , 2020. Vol. 12, nr 2, s. 888-894
Emneord [en]
Arsenic compounds, Dry etching, Electron beam lithography, Gold depositsIII-V semiconductors, Indium phosphide, Liquids, Nanowires, Semiconducting indium phosphide, Semiconductor junctions, Silicon compounds, Silicon oxides
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Identifikatorer
URN: urn:nbn:se:hh:diva-41477DOI: 10.1039/c9nr08025bISI: 000507642000037PubMedID: 31833520Scopus ID: 2-s2.0-85077403365OAI: oai:DiVA.org:hh-41477DiVA, id: diva2:1390326
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, P2016.0089Swedish Energy Agency, P364543Tilgjengelig fra: 2020-01-31 Laget: 2020-01-31 Sist oppdatert: 2020-01-31bibliografisk kontrollert

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Pettersson, Håkan

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Persson, Axel R.Barrigon, EnriqueBorgstrom, Magnus T.Pettersson, Håkan
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