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Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation
Instituto Federal de Educação, Ciência e Tecnologia do Pará, Abaetetuba, PA, Brazil & Programa de Pós-Graduação em Física, Universidade Federal do Pará, Belém, PA, Brazil & .ORCID-id: 0000-0002-9040-9939
Department of Physics, Central University of Rajasthan, Ajmer, India.ORCID-id: 0000-0002-5963-015X
Programa de Pós-Graduação em Física, Universidade Federal do Pará, Belém, PA, Brazil.ORCID-id: 000-0002-2348-1244
Department of Physics, Central University of Rajasthan, Ajmer, India.ORCID-id: 0000-0002-2777-4888
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2019 (engelsk)Inngår i: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 30, nr 33, artikkel-id 335202Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm −1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell. © 2019 IOP Publishing Ltd.

sted, utgiver, år, opplag, sider
Bristol: Institute of Physics (IOP), 2019. Vol. 30, nr 33, artikkel-id 335202
Emneord [en]
nanowires, Mn ion implantation, surface optical phonons, spintronics, Raman spectroscopy
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Identifikatorer
URN: urn:nbn:se:hh:diva-41450DOI: 10.1088/1361-6528/ab1beaISI: 000468881500001PubMedID: 31018190Scopus ID: 2-s2.0-85067269466OAI: oai:DiVA.org:hh-41450DiVA, id: diva2:1390239
Tilgjengelig fra: 2020-01-31 Laget: 2020-01-31 Sist oppdatert: 2020-04-07bibliografisk kontrollert

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Corrêa Jr, Gregório B.Kumar, SandeepPaschoal Jr, WaldomiroDevi, ChandniJacobsson, DanielJohannes, AndreasRonning, CarstenPettersson, HåkanParaguassu, Waldeci
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