hh.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation
Instituto Federal de Educação, Ciência e Tecnologia do Pará, Abaetetuba, PA, Brazil & Programa de Pós-Graduação em Física, Universidade Federal do Pará, Belém, PA, Brazil & .ORCID iD: 0000-0002-9040-9939
Department of Physics, Central University of Rajasthan, Ajmer, India.ORCID iD: 0000-0002-5963-015X
Programa de Pós-Graduação em Física, Universidade Federal do Pará, Belém, PA, Brazil.ORCID iD: 000-0002-2348-1244
Department of Physics, Central University of Rajasthan, Ajmer, India.ORCID iD: 0000-0002-2777-4888
Show others and affiliations
2019 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 30, no 33, article id 335202Article in journal (Refereed) Published
Abstract [en]

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm −1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell. © 2019 IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics (IOP), 2019. Vol. 30, no 33, article id 335202
Keywords [en]
nanowires, Mn ion implantation, surface optical phonons, spintronics, Raman spectroscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hh:diva-41450DOI: 10.1088/1361-6528/ab1beaISI: 000468881500001PubMedID: 31018190Scopus ID: 2-s2.0-85067269466OAI: oai:DiVA.org:hh-41450DiVA, id: diva2:1390239
Available from: 2020-01-31 Created: 2020-01-31 Last updated: 2024-03-11Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textPubMedScopus

Authority records

Pettersson, Håkan

Search in DiVA

By author/editor
Corrêa Jr, Gregório B.Kumar, SandeepPaschoal Jr, WaldomiroDevi, ChandniJacobsson, DanielJohannes, AndreasRonning, CarstenPettersson, HåkanParaguassu, Waldeci
By organisation
School of Information Technology
In the same journal
Nanotechnology
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
pubmed
urn-nbn

Altmetric score

doi
pubmed
urn-nbn
Total: 153 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf