hh.sePublikationer
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID-id: 0000-0002-3160-8540
Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID-id: 0000-0002-6269-2415
Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel, Germany.
Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID-id: 0000-0003-1971-9894
Visa övriga samt affilieringar
2019 (Engelska)Ingår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992Artikel i tidskrift, Editorial material (Refereegranskat) Epub ahead of print
Abstract [en]

High-performance photodetectors operating in the near-infrared (0.75−1.4 μm) and short-wave infrared (1.4−3.0 μm) portion ofthe electromagnetic spectrum are key components in many optical systems.Here, we report on a combined experimental and theoretical study of squaremillimeter array infrared photodetectors comprising 3 million n+−i−n+ In Pnanowires grown by MOVPE from periodically ordered Au seed particles. Thenominal i-segment, comprising 20 InAs0.40P0.60 quantum discs, was grown byuse of an optimized Zn doping to compensate the nonintentional n-doping.The photodetectors exhibit bias- and power-dependent responsivities reachingrecord-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60nW, both at 3.5 V bias. Moreover, due to the embedded quantum discs, thephotoresponse covers a broad spectral range from about 0.70 to 2.5 eV, ineffect outperforming conventional single InGaAs detectors and dual Si/Gedetectors. The high responsivity, and related gain, results from a novel proposed photogating mechanism, induced by the complex charge carrier dynamics involving optical excitation and recombination in the quantum discs and interface traps, which reduces the electron transport barrier between the highly doped ncontact and the i-segment. The experimental results obtained are in perfect agreement with the proposed theoretical model and represent a significant step forward toward understanding gain in nanoscale photodetectors and realization of commercially viable broadband photon detectors with ultrahigh gain. © 2019 American Chemical Society.

Ort, förlag, år, upplaga, sidor
Washington, DC: American Chemical Society (ACS), 2019.
Nyckelord [en]
Nanowires, infrared photodetectors, nanowire array photodetectors, optical gain, photogating, interface traps, quantum discs, discs-in-nanowires
Nationell ämneskategori
Atom- och molekylfysik och optik
Identifikatorer
URN: urn:nbn:se:hh:diva-41068DOI: 10.1021/acs.nanolett.9b02494PubMedID: 31721593Scopus ID: 2-s2.0-85075689177OAI: oai:DiVA.org:hh-41068DiVA, id: diva2:1374779
Forskningsfinansiär
VetenskapsrådetKnut och Alice Wallenbergs Stiftelse, 2016.0089Stiftelsen för strategisk forskning (SSF)Energimyndigheten, P38331-1
Anmärkning

Other funders: NanoLund & the Swedish National Board for Industrial and Technological Development & Erik Johan Ljungberg Foundation &  Carl Trygger Foundation &  European Union’s Horizon 2020 research and innovation program under Grant Agreement 641023 (NanoTandem) & National Center for High Resolution Electron Microscopy (nCHREM) at Lund University.

Tillgänglig från: 2019-12-02 Skapad: 2019-12-02 Senast uppdaterad: 2020-01-20Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextPubMedScopus

Personposter BETA

Karimi, MohammadPettersson, Håkan

Sök vidare i DiVA

Av författaren/redaktören
Karimi, MohammadZeng, XuluSamuelson, LarsBorgström, Magnus T.Pettersson, Håkan
Av organisationen
Halmstad Embedded and Intelligent Systems Research (EIS)
I samma tidskrift
Nano letters (Print)
Atom- och molekylfysik och optik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
pubmed
urn-nbn

Altmetricpoäng

doi
pubmed
urn-nbn
Totalt: 7 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf