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Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse
Halmstad University, School of Information Technology, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID iD: 0000-0002-3160-8540
Solid State Physics and NanoLund, Lund University, Lund, Sweden.
Solid State Physics and NanoLund, Lund University, Lund, Sweden.
Solid State Physics and NanoLund, Lund University, Lund, Sweden.
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2018 (English)In: QSIP 2018: Abstracts, 2018, p. 55-55Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g. solar cells, photodetectors and LEDs. The functional wavelength range of current NW-based photodetectors is typically limited to the visible/ near-infrared region. In this work, we present the first ever reported electrical and optical characteristics of longwavelength IR photodetectors based on large square millimeter ensembles of vertically grown and processed InAsP/InP heterostructure NWs grown on InP substrates1 . More specifically, the MOVPE-grown NWs comprise single or multiple InAsP quantum discs (QDiscs) axially embedded in an n+-i-n+ geometry. The NWs are contacted together in a vertical geometry by uniformly depositing a thin insulating SiO2 layer, selective etching of the oxide from the tip of the NWs followed by sputtering of ITO as a common top contact to all NWs. Using Fourier transform photocurrent spectroscopy, we demonstrate a photoresponse extending from the visible to far infrared1,2. In particular, the infrared response from 3-20 μm is enabled by intersubband transitions in the lowbandgap InAsP quantum discs synthesized axially within the InP NWs. The detector elements exhibit an unexpected sensitivity to normal incident radiation, apparently in contradiction to well-known selection rules for intersubband transitions in quantum wells. From in-depth 2D and 3D optical simulations we attribute this result to an excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors. Key advantages with the proposed design include a large degree of freedom in choice of material compositions, enhanced optical resonance effects due to periodically ordered NW arrays and the compatibility with silicon substrates. We believe that our novel detector design offers a route towards monolithic integration of compact and sensitive broadband III-V NW detectors with main-stream silicon technology which could seriously challenge existing commercially available photodetectors.

Place, publisher, year, edition, pages
2018. p. 55-55
Keywords [en]
nanowires, intersubband transitions, infrared photodetectors, photonic crystals
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:hh:diva-38635OAI: oai:DiVA.org:hh-38635DiVA, id: diva2:1271867
Conference
Quantum Structure Infrared Photodetectors Conference (QSIP 2018), Stockholm, Sweden, June 16-21, 2018
Available from: 2018-12-18 Created: 2018-12-18 Last updated: 2019-01-03Bibliographically approved

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Karimi, MohammadPettersson, Håkan

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CiteExportLink to record
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Citation style
  • apa
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