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Electro-optical characterisation of inp nanowire based p-n, p-i-n infrared photodetectors
Högskolan i Halmstad, Akademin för informationsteknologi. amin_m154@yahoo.com.
Högskolan i Halmstad, Akademin för informationsteknologi. obai_aust@yahoo.com.
2012 (engelsk)Inngår i: Journal of Communications, ISSN 1796-2021, E-ISSN 1796-2021, Vol. 7, nr 11, s. 808-820Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3-1.55 pm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultraviolet into the electrical signal that is convenient for measurement. Since the last decade, the electro-optical characterisation of photodetectors has been investigated to improve their performance and price. In this paper, we are going to discuss the characterisation of the two different type infrared photodectors based on nanowire that we have worked on our project. One photodetector is p- n nanowire structure, and another is p-i-n structure. Both photodetectors is worked based on internal photoelectric effect and on the theory of p-n junction. We investigated the detector performance at 77K-300K temperature corresponding with wavelength in darkness and under illumination as regarding breakdown voltage, sensitivity, and quantum efficiency. We have also compared the differences between the two photodetectors performance characteristics. © 2012 ACADEMY PUBLISHER.

sted, utgiver, år, opplag, sider
Rowland Heights, CA: Engineering and Technology Publishing , 2012. Vol. 7, nr 11, s. 808-820
Emneord [en]
High conversion efficiency, High speed photodetectors, InP, Internal photoelectric effect, IR photodetectors, Large wavelength range, NWs, Performance characteristics, Bit error rate, Nanowires, Optoelectronic devices, Photodetectors, Semiconductor junctions, Signal to noise ratio, Photons
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Identifikatorer
URN: urn:nbn:se:hh:diva-37448DOI: 10.4304/jcm.7.11.808-820Scopus ID: 2-s2.0-84878104087OAI: oai:DiVA.org:hh-37448DiVA, id: diva2:1242971
Tilgjengelig fra: 2018-08-29 Laget: 2018-08-29 Sist oppdatert: 2018-08-29bibliografisk kontrollert

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