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Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID-id: 0000-0002-3160-8540
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Solid State Physics and NanoLund, Lund University, Lund, Sweden.ORCID-id: 0000-0001-5993-8106
Solid State Physics and NanoLund, Lund University, Lund, Sweden.
Solid State Physics and NanoLund, Lund University, Lund, Sweden.
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2017 (Engelska)Ingår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 17, nr 6, s. 3356-3362Artikel i tidskrift, Letter (Refereegranskat) Published
Abstract [en]

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors. © 2017 American Chemical Society.

Ort, förlag, år, upplaga, sidor
Washington, DC: American Chemical Society (ACS), 2017. Vol. 17, nr 6, s. 3356-3362
Nyckelord [en]
Nanowires, disc-in-nanowire, infrared photodetectors, quantum discs
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Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:hh:diva-34047DOI: 10.1021/acs.nanolett.6b05114ISI: 000403631600005PubMedID: 28535059Scopus ID: 2-s2.0-85020825146OAI: oai:DiVA.org:hh-34047DiVA, id: diva2:1107770
Tillgänglig från: 2017-06-10 Skapad: 2017-06-10 Senast uppdaterad: 2018-04-03Bibliografiskt granskad

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Karimi, MohammadJain, VishalHussain, LaiqBuyanova, Irina A.Borgström, Magnus T.Pettersson, Håkan

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Karimi, MohammadJain, VishalHussain, LaiqBuyanova, Irina A.Borgström, Magnus T.Pettersson, Håkan
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Tillämpad matematik och fysik (MPE-lab)Halmstad Embedded and Intelligent Systems Research (EIS)
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