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Optimization of Deep-UV Lithography Process
Högskolan i Halmstad, Akademin för informationsteknologi.
(engelsk)Independent thesis Advanced level (degree of Master (One Year)), 10 poäng / 15 hpOppgave
Abstract [en]

This master’s project report deals with the process development for patterning thesub-micron features using Deep-UV photolithography. Patterning of the sub-micronstructures in the resists UV26 and ZEP520A-7 has been demonstrated successfully. Using theKarl Süss-MJB4 DUV mask aligner, trenches of width down to 535 nm have been obtained.Good results have been obtained in these experiments considering the development time andthe exposure time, which are found to be shorter compared to previously published results.This provides a faster process and higher throughput. Experimental steps along with thefurther improvement areas are discussed.Equipment used include a Karl Süss-MJB4 DUV mask aligner, an optical microscope anda Scanning Electron Microscope (SEM).

Emneord [en]
Scanning Electron Microscope (SEM), thesub-micron features
Identifikatorer
URN: urn:nbn:se:hh:diva-28373OAI: oai:DiVA.org:hh-28373DiVA, id: diva2:815912
Fag / kurs
Electrical Engineering
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Tilgjengelig fra: 2015-06-02 Laget: 2015-06-02 Sist oppdatert: 2015-06-02bibliografisk kontrollert

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