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MWIR interband transitions in type-II (III) In(GaAl)Sb quantum dots
Acreo ICT AB, Kista, Sweden.
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). (Nanovetenskap)
Solid State Physics and the Nanometer Structure Consortium, Lund University, Lund, Sweden.
Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, South Korea.
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2015 (engelsk)Konferansepaper, Poster (with or without abstract) (Fagfellevurdert)
Abstract [en]

In this work we present an alternative approach for realizing desired IR devices with appropriate operating wavelengths in the MWIR region utilizing In(GaAl)Sb quantum dots embedded in an InAs matrix grown by MBE. The QDs exhibit spatially indirect interband transitions in a type-II broken bandgap alignment, with a transition energy that can be tuned by bandgap and strain engineering utilizing either the quantum dot size or the incorporation of Ga or (GaAl) into the QDs. Furthermore, the growth of such QDs does not require sophisticated epitaxial designs needed for superlattices or quantum cascade structures regarding large numbers of alternating layers and very exact interfaces. The QD structures are expected to exhibit key advantages for IR devices e.g. higher operating temperature, lower power consumption, size, weight, and cost. The structural and composition properties of designed and grown In(GaAl)Sb QDs were characterized using AFM, SEM, TEM, and XRD. The corresponding optical properties, both in terms of absorption and emission, were analyzed and compared for selected QD samples before and after annealing at 650 °C.

sted, utgiver, år, opplag, sider
2015.
Emneord [en]
type-II transitions, interband transitions, In(GaAl)Sb quantum dots, MWIR
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-27586OAI: oai:DiVA.org:hh-27586DiVA, id: diva2:783293
Konferanse
SPIE Photonics West 2015, San Fransisco, California, USA, 7-12 February, 2015
Tilgjengelig fra: 2015-01-25 Laget: 2015-01-25 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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